march 201 3 .version 3 .0 magnachip semiconductor ltd . 1 MPMC100B120RH npt & rugged type 1200v igbt module absolute maximum ratings @ t c = 25 o c (per leg) characteristics symbol rating unit collector - emitter voltage v ce s 1 200 v g ate - voltage v g e s 20 v continuous collector current t c =25 o c i c 1 5 0 a t c = 8 0 o c 100 a pulsed collector current (1) i c m 20 0 a diode continuous forward current t c = 8 0 o c i f 100 a diode maximum forward current i fm 20 0 a power dissipation t c =25 o c p d 694 w short circuit withstand time t sc 10 u s operating junction temperature tj - 55~150 o c storage temperature range t stg - 55~1 25 o c isolation voltage ac 1min ute v iso 2500 v mounting screw torque : m 6 - 4 n.m note : (1) repetitive rating : pulse width limited by max. junction temperature MPMC100B120RH npt & rugged type 1200v igbt module featu res ? b v ces = 1 200 v ? low conduction loss : v ce(sat) = 2 . 8 v (typ.) ? fast & soft anti - parallel fwd ? short circuit rated : min. 10u s at t c =100 ? isolation type package applications ? induction heating, mot or drives, high power inverters ? welding machine, ups 7dm - 2 equivalent circuit general description magna c hip s igbt module 7dm - 2 p ackage devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. these igbt module s eries are ideally suited for ih, high p ower inverters, m otors drives and other applications where switching losses are significant portion of the total losses . e 301932
march 201 3 .version 3 .0 magnachip semiconductor ltd . 2 MPMC100B120RH npt & rugged type 1200v igbt module e lectrical characteristics of igbt @ t c =25 o c (unless otherwise specified) characteristics symbol test condition min . typ . max . unit static characteristics collector - emitter breakdown voltage bv ces i c = 1m a, v g e = 0v 1 200 - - v gate threshold voltage v g e (th) v ce = v g e , i c = 2m a 4.5 - 6 .5 collector cut - off current i ce s v ce = 1 2 00 v, v g e = 0v - - 1 m a gate leakage current i g e s v g e = 2 0 v, v c e = 0v - - 2 5 0 n a collector - emitter saturation voltage v ce(sat) v g e = 1 5 v, i c = 100 a t c =25 - 2. 8 3.2 v t c =100 - 3. 4 - v dynamic characteristics total gate charge q g v cc = 600 v, i c = 100 a , v ge = 15 v - 4 00 - nc gate - emitter charge q g e - 44 - gate - collector charge q g c - 236 - input capacitance c i e s v ce = 30 v, v g e = 0v, f = 1.0mhz - 4 76 0 - p f output capacitance c oe s - 518 - reverse transfer capacitance c re s - 1 75 -- turn - on delay time t d(on) v cc = 600v, i c =100a, v ge = 15v, r g = 1 0 , inductive load - 135 - ns rise time t r - 60 - t ur n - off delay time t d(off) - 450 - fall time t f - 7 0 - turn on switching loss e on - 6.7 - mj turn off switching loss e off - 6.0 - mj total switching loss e ts - 12.7 - mj short circuit withstand time t sc v cc = 600v, v ge = 15v r g = 1 0 @ tc = 100 10 - - u s electrical characteristics of frd @ ta =25 o c (unless otherwise specified) diode forward voltage v fm i f = 100 a t c =25 - 2. 9 3. 5 v t c =100 - 2. 3 - diode reverse recovery time t rr i f = 100 a, v r =600v , di/dt = - 20 0a/u s t c =25 - 100 - n s t c =100 220 diode peak reverse recovery current i rr t c =25 - 5 - a t c =100 - 15 - diode reverse recovery charge q rr t c =25 - 250 - nc t c =100 - 1 650 -
march 201 3 .version 3 .0 magnachip semiconductor ltd . 3 MPMC100B120RH npt & rugged type 1200v igbt module thermal characteristics and weight characteristics symbol min. typ. max. unit junction - to - case(igbt part) r jc - - 0. 1 8 /w junction - to - case(diode part) r jc - - 0. 4 5 /w case - to - sink ( conductive grease applied) r cs 0.05 - - /w weigh t of module weight - - 250 g
march 201 3 .version 3 .0 magnachip semiconductor ltd . 4 MPMC100B120RH npt & rugged type 1200v igbt module fig. 6 typical turn - off energy = f(r g ) v ge = 15v, ic = 100a, v ce = 600v fig. 5 typical turn - on energy = f(r g ) v ge = 15v, ic = 100a, v ce = 600v f ig.1 typical output characteristics fig. 2 typical output characteristics f ig .4 gate charge characteristics fig. 3 typical saturation voltage characteristics 0 1 2 3 4 5 6 0 50 100 150 200 250 300 common emitter t c =25 12v 15v 20v 10v 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 6 0 50 100 150 200 250 300 8v 10v 12v 15v 20v common emitter t c =125 collector current,i c [a] collector - emitter voltage,v ce [v] 0 1 2 3 4 5 6 0 50 100 150 200 250 300 collector current,i c [a] t c =25 t c =125 collector-emitter voltage,v ce [v] 0 100 200 300 400 500 0 2 4 6 8 10 12 14 16 v ce =600v,i c =100a t c =25 gate-emitter voltage, v ge [v] gate charge, qg[nc] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 eoff(t c =25 ) eoff(t c =125 ) eoff[mj] r g [ ] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 eon(t c =25 ) eon(t c =125 ) eon[mj] r g [ ]
march 201 3 .version 3 .0 magnachip semiconductor ltd . 5 MPMC100B120RH npt & rugged type 1200v igbt module fig. 7 rated current vs. case temperature fig. 8 power dissipation vs. case temperature fig. 9 transient thermal impedance fig. 1 0 forward characteristics 0 1 2 3 4 5 0 50 100 150 200 250 300 t c =25 t c =125 forward current, i f [a] forward drop voltage, v f [v] 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200 t j = 150 v ge 15v collector current,i c [a] case temperatute, tc[ ] 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 700 800 900 1000 t j 150 p d =f(t c ) power dissipation[w] t c [ ] 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-4 1e-3 0.01 0.1 1 t c =25 frd igbt thermal response zthjc[ /w] rectangular pulse duration time[sec]
march 201 3 .version 3 .0 magnachip semiconductor ltd . 6 MPMC100B120RH npt & rugged type 1200v igbt module package dimension 7dm - 2 d imensions are in millimeters, unless otherwise specified tbd tbd
march 201 3 .version 3 .0 magnachip semiconductor ltd . 7 MPMC100B120RH npt & rugged type 1200v igbt module disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to resu lt in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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